| abstract |
The present invention provides a composition for forming a photoresist underlayer film, which can form a lower layer film for a three-layer photoresist treatment, which can reduce reflectance and have high pattern bending resistance, and can be formed in a finer height and width than 60 nm. After the etching of the line, no film collapse or distortion of the underlying film occurs, and a pattern forming method using the composition is provided. A composition for forming a photoresist underlayer film, comprising: one or both of a compound represented by the following formula (1) and a condensate of the compound, and an organic solvent. [Chemical 1] □ [Chemical 2] □ |