| abstract |
A semiconductor device comprising: a first insulating layer on a substrate; a first metal oxide layer on the first insulating layer; an oxide semiconductor layer on the first metal oxide layer; and a second metal oxide on the oxide semiconductor layer a gate layer; a gate insulating layer on the second metal oxide layer; a second insulating layer on the second metal oxide layer; and a gate electrode layer on the gate insulating layer, wherein the gate insulating layer includes a gate a region where the side surface of the electrode layer contacts, the second insulating layer includes a region in contact with the gate insulating layer, the oxide semiconductor layer includes a first region to a third region, and the first region includes a region overlapping the gate electrode layer, The two regions include a region overlapping the gate insulating layer or the second insulating layer, the second region is between the first region and the third region, and the second region and the third region include an element N (N is phosphorus, argon) , 氙) area. |