http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201709309-A

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filingDate 2016-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd8558c12beb39db62077d7d55546cb2
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publicationDate 2017-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201709309-A
titleOfInvention Semiconductor device and method of manufacturing same
abstract A predetermined thickness portion of the total thickness of the tie bars of the lead frame (2) of the QFN substrate (1) is cut using a rotary blade (21) thicker than a conventional rotary blade (24) to form a cutting groove (22). Next, a plating layer (23) is formed on the bottom surface of the lead frame (2) and the surface of the dicing trench (22) by electroplating. Next, the residual thickness portion of the lead frame (2) in the dicing groove (22) and the entire thickness of the encapsulating resin (8) are cut together using a rotating blade (24) of a usual thickness. The QFN article (26) is manufactured by dividing the QFN substrate (1) into two stages to completely remove the tie bars. In the QFN product (26), a plating layer (23) can be formed stably on the side surface of the lead (5) and on the surface of the concave portion (27) formed on the side surface of the lead (5).
priorityDate 2015-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.