| abstract |
A method of fabricating a semiconductor structure includes the following steps. A plurality of gate structures are formed on the semiconductor substrate to form source/drain contacts between the two adjacent gate structures. The source/drain contact is drilled into the process. After the boring process, the source/drain contact upper surface is lower than the upper surface of the gate structure. After the boring process, a stop layer is formed on the gate structure in contact with the source/drain, and the upper surface of the stop layer on the source/drain contact is lower than the upper surface of the gate structure. A semiconductor structure includes a semiconductor substrate, a gate structure, a gate contact structure, and a source/drain contact. The source/drain contact is disposed between two adjacent gate structures, and the source/drain contact upper surface is lower than the upper surface of the gate structure. |