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filingDate 2012-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6634e62743e61306c70026ef8cb4f374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c37f091fb22c8d5e548ab2e54c4d8fb5
publicationDate 2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201707180-A
titleOfInvention Semiconductor imaging device
abstract The present invention provides a semiconductor device having a more reliable bonding surface. The first semiconductor device includes: a first interconnect layer including: a first interlayer insulating film; and a first surface buried in the first interlayer insulating film and having a surface on the same surface as one surface of the first interlayer insulating film An electrode pad; and a first dummy electrode embedded in the first interlayer insulating film and having a surface on the same surface as one surface of the first interlayer insulating film and disposed around the first electrode pad; and the second The wiring layer includes: a second interlayer insulating film located on one surface side of the first electrode pad of the first interlayer insulating film; and a first interlayer insulating film embedded in the second interlayer insulating film and having a surface and a second interlayer insulating film a surface on the side of the interlayer insulating film is located on the same surface, and is bonded to the second electrode pad on the first electrode pad; and a surface is disposed on the same surface as the surface on the side of the first interlayer insulating film of the second interlayer insulating film, and is disposed on the same surface The second electrode pad is bonded to the second dummy electrode on the first dummy electrode. The second semiconductor device includes a first semiconductor portion having a first electrode extending on the surface on the bonding interface side and extending in the first direction, and a second semiconductor portion having the first electrode bonded to the first electrode The second electrode extending in the second direction intersecting the first direction is provided to be bonded to the first semiconductor portion at the bonding interface.
priorityDate 2011-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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