| abstract |
The present invention provides a method of processing an interconnect component, comprising providing a substrate component having a reverse front and back surface and a conductive structure; a first dielectric layer overlying the front surface and a first surface of the first dielectric layer has a plurality of conductor contacts; and a second dielectric layer stacked over the rear surface and a conductor at a second surface of the second dielectric layer element. The method also includes removing a portion of the second dielectric layer to reduce the thickness of the portion to a second thickness, and providing a raised portion of the second dielectric layer having a first thickness and a There is a descending portion of the second thickness. The first thickness will be greater than the second thickness. At least a portion of the conductor element may be recessed below a height of the first thickness of the second dielectric layer. |