http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201705597-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_adf225ca4a6bf6190b6a2763410d1ebf |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M2008-1293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M8-1253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M8-1286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M8-2432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M8-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-8871 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M8-10 |
filingDate | 2016-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7895ed24d1a2544a4af8f931bc3199cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_339046452f11efd070b0efc0cb5375ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1f88731ea392c38fdcf74c4080b8c3d |
publicationDate | 2017-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201705597-A |
titleOfInvention | Energy conversion device and method of forming same |
abstract | A variety of specific aspects can provide a means of forming an energy conversion device. The method can include forming an electrolyte layer on the first surface of the semiconductor substrate. The method can also include forming a cavity on the second surface of the semiconductor substrate using deep reactive ion etching. The method can further include enlarging the cavity by performing one or more wet etches such that the enlarged cavity is at least partially defined by a vertical alignment comprising: a first lateral cavity surface of the semiconductor substrate And extending substantially in a first direction; and a second lateral cavity surface of the semiconductor substrate adjoining the first lateral cavity surface. The method can include forming a first electrode on the first surface of the electrolyte layer and forming a second electrode on the second surface of the electrolyte layer. |
priorityDate | 2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.