| abstract |
One of the objects of the present invention is to provide a semiconductor device with good electrical characteristics or to provide a highly reliable semiconductor device. The transistor includes a first oxide film including indium, an element M, and zinc, and the first oxide film includes indium, an element M, and an atomic ratio of zinc satisfying indium: element M: zinc = xb: yb: In the region of zb, xb:yb:zb satisfies (1-α1): (1+α1): m1 or (1-α2): (1+α2): m2, α1 is -0.43 or more and 0.18 or less, and α2 is - 0.78 or more and 0.42 or less, and m1 and m2 are more than 0.7 and 1 or less. |