http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201705382-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75750aafb2142261c702b868240c0c9b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7627 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-18 |
| filingDate | 2016-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ffe3e5ab7e7fb1a5f4201163f847f77 |
| publicationDate | 2017-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201705382-A |
| titleOfInvention | Thermally stable charge trapping layer for the fabrication of semiconductor-on-insulator structures |
| abstract | A single crystal semiconductor processing substrate for the fabrication of a semiconductor-on-insulator (e.g., a germanium-on-insulator (SOI)) structure is etched to form a porous layer in a front surface region of the wafer. The etched regions are oxidized and then filled with a polycrystalline or amorphous semiconductor material. The surface is polished to render it bondable to a semiconductor donor substrate. Layer transfer is performed on the polished surface, thereby producing a semiconductor-on-insulator (e.g., on-insulator (SOI)) structure having four layers: a handle substrate, a composite layer including filled vias, a dielectric Layers (eg, buried oxide), and device layers. The structure can be used as an initial substrate in the process of making a radio frequency wafer. The resulting wafer has an anti-parasitic effect, in particular, no induced conductive channels under the buried oxide. |
| priorityDate | 2015-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 75.