Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-36 |
filingDate |
2014-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_878c579e06c58a69a20d961ac35d4773 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_404a7cc62e68fd4411507b653358c33d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_583073b629be771d500c8b83df736f1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca4318f121c638d648914ebd4da36c89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c66cb7adb389e83295bd9b6ad4836018 |
publicationDate |
2017-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201705309-A |
titleOfInvention |
Vertical non-planar semiconductor device for system single-chip (SoC) applications |
abstract |
The present invention describes a vertical non-planar semiconductor device for system single-chip (SoC) applications and a method of fabricating a vertical non-planar semiconductor device. For example, a semiconductor device includes a semiconductor fin disposed over a substrate having a recessed portion and an uppermost portion. A source region is disposed in the recessed portion of the semiconductor fin. A drain region is disposed in the uppermost portion of the semiconductor fin. A gate electrode is disposed over the uppermost portion of the semiconductor fin between the source region and the drain region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I673779-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10847633-B2 |
priorityDate |
2013-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |