http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201703276-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e565b6678873d9f256e8fec9ada071ee |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 |
| filingDate | 2015-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97ff2337516ebd0bbbcf73fba0fb8362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79264651554fa539d06156ce7acdc701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81bdbb32abb76081886119581e46786d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0cafe3324e16a2ebb382c9b773e7b13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e194dccf21508c56b0ee66f7c16b55d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7098a06023bb813b228549180d5a5928 |
| publicationDate | 2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201703276-A |
| titleOfInvention | Ultra-shallow junction photovoltaic cell manufacturing method |
| abstract | The invention relates to a method for manufacturing a photovoltaic cell with ultra-shallow junction layer, wherein the manufacturing process comprises the step of cleaning the crystalline germanium substrate by electron cyclotron resonance high-density plasma method, and the temperature of the crystalline germanium substrate is 50 ° C to 250 ° C, The microwave power is about 500W, the deposition pressure is below 50mTorr, the flow rate of argon gas, hydrogen gas is about 20sccm, the flow rate of SiH4 is about 1-2sccm, and the flow rate of 2% diborane is about 5~15sccm. The growth thickness is 5~80nm. The first doped semiconductor layer having a band gap of about 1.12 eV has the advantages of a steep homogenous epitaxial junction, an ultrathin, high crystallinity ruthenium-based film, high doping concentration, high electrical conductivity, and high short-circuit current. Therefore, the efficiency of the product can be improved. |
| priorityDate | 2015-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.