| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6719
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2016-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f210f36e36341550c50fe531a82dfff8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71433337fffc76a7c5fd06712e09d6a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d938567092e101ff48a04d3ee139d31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46c1f83f4e3a0aabbbdaaa4f98bfc51d |
| publicationDate |
2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201703130-A |
| titleOfInvention |
Method and apparatus for selective removal of metal nitrides using alkylamines |
| abstract |
Improved methods and apparatus for selectively removing metal nitrides from exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer on top of a substrate includes the steps of: (a) oxidizing a metal nitride layer to form a metal oxynitride layer (MN1-xOx) on a surface of the metal nitride layer, Wherein M is one of titanium or tantalum and x is an integer from 0.05 to 0.95; and (b) exposing the metal oxynitride layer (MN1-xOx) to a process gas, wherein the metal oxynitride layer (MN1) -xOx) reacts with the process gas to form a volatile compound that desorbs from the surface of the metal nitride layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I803479-B |
| priorityDate |
2015-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |