| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2016-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6bd4aa3e5ceee9c096a9baeb594fcb7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_677a21db4f7f686498c3a92f526d4be0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c24cafa304baf818473b71f1490aec32 |
| publicationDate |
2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201703119-A |
| titleOfInvention |
Selective epitaxy method |
| abstract |
Embodiments of the present disclosure are generally directed to methods for trench filling high quality epitaxial germanium containing materials without losing growth selectivity for dielectrics such as hafnium oxide and tantalum nitride. The method includes epitaxially growing a germanium-containing material in the trench by exposing the trench to a gas mixture, the trench being formed in a dielectric layer comprising a hafnium halide compound and a hafnium halide compound. In one embodiment, the antimony halide compound comprises decane chloride and the antimony halide compound comprises decane chloride. |
| priorityDate |
2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |