http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201702347-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a665d61597c2731ab4130971ee397dc9 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
filingDate | 2016-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_523e5f0c7418f04134cf08ce1d859e56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a0b5170fd0b55fb8c6d9c96fa1817a3 |
publicationDate | 2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201702347-A |
titleOfInvention | 矽 wafer polishing composition and polishing method |
abstract | The object of the present invention is to reduce LPD in the final processing and polishing of tantalum wafers, and to prevent the contamination of metals, especially nickel and copper. The present invention provides a polishing composition comprising abrasive particles, a water-soluble polymer, a basic compound, a chelating agent, and a polishing composition for water, characterized in that the particle size of the particles present in the polishing composition is In the distribution, the particle diameter corresponding to a volume accumulation of 10% from the side having a small particle diameter is D10, and the particle diameter corresponding to a volume accumulation of 50% from the side having a small particle diameter is D50. When the particle size corresponding to the small particle size is 90% and the particle size is set to D90, the value of the coarse particle frequency parameter A defined by A=(D90-D50)/(D50-D10) is less than 1.7. And used for the final processing grinding of 矽 wafer grinding. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113874464-A |
priorityDate | 2015-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.