http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201701331-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2016-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a64be52af17d74df8809ff1fd82d6f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82a2df81e16a643fbecf8e238aa39cf5 |
| publicationDate | 2017-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201701331-A |
| titleOfInvention | Gate electrode material residue removal process |
| abstract | The present invention provides a method of removing gate electrode residues from a gate structure after a gate electrode patterning process. In one example, a method for forming a high aspect ratio feature in a gate electrode layer of a gate structure includes performing a surface treatment process on a gate electrode residue remaining on the gate structure, the gate structure setting On the substrate; selectively forming a processed residue in the gate structure on the substrate, and having some untreated regions in the vicinity of the gate structure; and performing a remote plasma residue removal process to remove from the substrate The residue is treated. |
| priorityDate | 2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.