| abstract |
The present invention provides a polymer for a photoresist underlayer film material, which is capable of forming a photoresist underlayer film having excellent alkali hydrogen peroxide water resistance, excellent landfill/planarization characteristics, and excellent dry etching characteristics. A polymer for a photoresist underlayer film material, comprising a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (3); wherein, in the formula, R01nEach is independently a hydrogen atom or a methyl group. R02nIt is selected from the group consisting of the following formulae (1-1) to (1-3). R03nThe saturated or unsaturated carbon group having 4 to 20 carbon atoms may also contain an oxygen functional group. A2nIt is a single bond or a divalent linking group having a carbon number of 2 to 10 containing an ester group. In the formula (2), the broken line represents the keying hand. |