| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66818
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2015-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e73ecb1d0ef7da94253c60ca6a5a5621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e22500b48cdf8436900c92c6baf1daa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38af66c0d2d4bbb62f28fd6a4f027254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e125791469917725a57f37d2f5c6b97f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7819d634f5333494ec9ef45da50a6c44 |
| publicationDate |
2016-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201643967-A |
| titleOfInvention |
Semiconductor device including fin structure and method of fabricating the same |
| abstract |
The present invention provides a semiconductor device including a fin structure and a method of fabricating the same. A method of fabricating a semiconductor fin transistor includes forming a fin structure on a substrate. The fin structure includes an upper layer, and a portion of the upper layer is exposed from the isolation insulating layer. A dummy gate structure is formed over a portion of the fin structure. The dummy gate structure includes a dummy gate electrode layer and a dummy gate dielectric layer. Form the source and the bungee. The dummy gate electrode is removed to expose the upper layer covered by the dummy gate dielectric layer. The upper layer of the fin structure is removed to form a recess by the dummy gate dielectric layer. The portion of the upper layer remains in the bottom of the groove. A channel layer is formed in the recess. Remove the dummy gate dielectric layer. A gate structure is formed over the channel layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361280-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I661565-B |
| priorityDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |