| abstract |
The present invention relates to a pattern processing method comprising: (a) providing a semiconductor substrate comprising patterned features on a surface thereof; (b) applying a pattern treatment composition to the patterned features, wherein the pattern processing composition comprises embedding a segment copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed of a first monomer, and the first monomer comprises an olefinic system An unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed of a second monomer, and the second monomer comprises an olefinic group a saturated polymerizable group and an aromatic group, the limitation is that the second monomer is not styrene; and (c) the residual pattern treatment composition is washed away from the substrate, leaving a block copolymer bonded to the patterned features section. The method is particularly suitable for fabricating semiconductor devices that provide high resolution patterns. |