http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201643269-A

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filingDate 2016-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22e8ce90fb0202aab144119f5a452262
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publicationDate 2016-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201643269-A
titleOfInvention Plasma enhanced chemical vapor deposition device and method
abstract According to the present invention, there is provided a plasma enhanced chemical vapor deposition (PE-CVD) apparatus, the apparatus comprising: a chamber comprising a circumferential pumping passage; a substrate support disposed within the chamber; one or more gases An inlet for introducing a gas into the chamber; a plasma generating device for generating a plasma in the chamber; and an upper member and a lower member, the upper member and the lower member being positioned in the chamber Wherein: the upper member is spaced apart from the substrate support to constrain the plasma and define a first circumferential pumping gap, and the upper member acts as a radially inward wall of the circumferential pumping passage; and the upper member and The lower member is radially spaced apart to define a second circumferential pumping gap that acts as an inlet to the circumferential pumping passage, wherein the second circumferential pumping gap is greater than the first circumferential pumping gap Wider.
priorityDate 2015-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.