| abstract |
Embodiments of the invention include a semiconductor device and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor die with one or more die contacts. Embodiments include a soldered solder bump over one or more of the die contacts. In one embodiment, a dielectric metal compound (IMC) barrier layer is formed at the interface between the solder bump and the die contact. In one embodiment, the IMC barrier layer is a CuZnIMC and/or a Cu5Zn8 IMC. |