Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 |
filingDate |
2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a576675f8475f302b315e1b4a8ddc33 |
publicationDate |
2016-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201642354-A |
titleOfInvention |
Semiconductor device and method of manufacturing same |
abstract |
The present disclosure provides a method of fabricating a semiconductor device comprising forming a fin structure comprising a well layer, an oxide layer on the well layer, and a channel layer on the oxide layer. An isolation insulating layer is formed such that the channel layer protrudes from the isolation insulating layer and at least a portion of the oxide layer is embedded in the isolation insulating layer. A gate structure is formed on a portion of the fin structure and the isolation insulating layer. A recess is formed by etching a portion of the fin structure to expose the surface of the well layer. An epitaxial layer is formed on the exposed well layer and channel layer. The epitaxial layer formed on the exposed well layer is modified to increase the etch selectivity of the modified layer to the alkaline solution compared to the unmodified epitaxial layer. |
priorityDate |
2015-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |