| abstract |
The present invention provides a chemical mechanical polishing composition comprising first abrasive particles, wherein the first abrasive particles are wet cerium oxide particles having a median particle size of from about 40 nm to about 100 nm, from about 0.005 wt.% to about A concentration of 2 wt.% is present in the polishing composition and has a particle size distribution of at least about 300 nm; a functionalized heterocycle; a pH adjuster; and an aqueous carrier, and wherein the polishing composition has a pH of from about 1 to about 6. The present invention also provides a method of polishing a substrate, particularly a substrate comprising a ruthenium oxide layer, using the polishing composition. |