| abstract |
The present invention relates to a novel composition having improved stability, comprising a soluble multi-ligand substituted metal compound, a polyol compound and a solvent for use in a good trench or pass with lithographic features on the photoresist pattern a filling material of a pore-filling property in which a filled pattern has good plasma etching resistance in an oxygen-based plasma and is used as a hard mask in forming a fine pattern on a semiconductor substrate, and the fine patterns are thereby hard covered The pattern of the cover is transferred. The invention is further directed to a method of using the novel composition for the manufacture of an electronic device. |