| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2015-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd4f24995c655b00fbc4cbaea5e054c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cbb92542b7771702e2dcc9d60e4684c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b51552053156674fa7d3685139bd3c61 |
| publicationDate |
2016-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201635525-A |
| titleOfInvention |
High electron mobility transistor and semiconductor device |
| abstract |
The present invention describes a high electron mobility transistor (HEMT) that includes a plurality of field plates. In a first embodiment, the HEMT includes: a first semiconductor material and a second semiconductor material, the first semiconductor material and the second semiconductor material are disposed to form a heterojunction at which a two-dimensional electron gas appears; And a source electrode, a drain electrode and a gate electrode. The gate electrode is configured to adjust conductivity in the heterojunction between the source electrode and the drain electrode. The gate has a drain side edge. A field plate connecting the gates is disposed over the drain side edge of the gate electrode and extends laterally toward the drain. A second field plate is disposed over the drain side edge of the field plate of the connection gate and extends laterally toward the drain. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I735938-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11127846-B2 |
| priorityDate |
2013-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |