Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2015-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7192211cc09ba70380ba53c1883dbecf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4514f136975e489e171d7c379dab25ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e79784ebffb488222d7a46c9562a9db6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86528f8e7522bfbb02a4397cd4d1d1f |
publicationDate |
2016-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201634743-A |
titleOfInvention |
Semiconductor device manufacturing method, substrate processing device, substrate processing system, and recording medium |
abstract |
An object of the present invention is to provide a technique for removing impurities remaining in a film at the time of film formation, and at the same time, changing the film properties as the impurity concentration changes.nThe solution of the present invention includes a step of activating a reforming gas containing at least one of a reducing agent, a nitriding agent, and an oxidizing agent by plasma excitation, and activating the irradiation on the film formed on the substrate. The modified gas is a step of modifying the film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I770206-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110892507-A |
priorityDate |
2015-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |