| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02J50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252 |
| filingDate |
2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ea67f852809d6bc9a9a259c2d25fd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc268ad00546a86c3211f9cd5314d59e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcc104abe4eb5db08ec6a34eb0346ab3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be838bfc2d950624fa685a5ee97dd0a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_559fbf9c8ee11ed2af48752026f56130
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f67b0212f6fd1b4f0e5143f7afd92ad |
| publicationDate |
2016-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201633543-A |
| titleOfInvention |
N-type channel gallium nitride transistor |
| abstract |
The present description relates to an N-type channel gallium nitride transistor comprising a concave gate electrode wherein the polarization layer between the gate electrode and the gallium nitride layer is less than about 1 nm. In an additional embodiment, the N-channel gallium nitride transistor may have an asymmetric configuration in which the gate to drain length is greater than the gate to source length. In another embodiment, an N-channel gallium nitride transistor may be used in a wireless power/charging device for improved efficiency, longer transmission than a wireless power/charging device using a germanium based transistor. Distance, and smaller form factor. |
| priorityDate |
2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |