| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
| filingDate |
2015-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7782f49ae891bb2192686a7160e2ed76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c1bb25e90ea5040852abd2a788aef74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_607c30fbfdceb01f0c11dcb5ce27741a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee4917b162768c8d7e429f740df8e21f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb86c5ef7ed264ac6d183b6435e0a9db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bd7c9408e3cbde36c21f2ab8f0920ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3f2d225fd489476d638bd2cc6932e7d |
| publicationDate |
2016-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201633464-A |
| titleOfInvention |
Semiconductor memory device and method of manufacturing same |
| abstract |
Embodiments of the present invention provide a semiconductor memory device that is easy to manufacture and has high reliability and a method of manufacturing the same.nA semiconductor memory device according to an embodiment includes: a semiconductor pillar extending in a first direction; a first electrode extending in a second direction intersecting with the first direction; and a second electrode provided on the semiconductor pillar and the first electrode a first insulating film provided between the first electrode and the second electrode and on both sides of the first electrode in the first direction; and a second insulating film provided on the second electrode a third insulating film disposed between the first electrode and the first electrode in the first direction; a third insulating film disposed between the second electrode and the semiconductor pillar; and a conductive film disposed on the first insulating film The region between the first insulating film and the second insulating film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I723485-B |
| priorityDate |
2015-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |