| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2015-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e2175c9219bbc793c8dde3f525f64c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74addc67857f38a714d4375c814fb737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fc0025682c8adb27c90d36fb33f1e1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94847a204b180adae8b6c138575fb9f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74b593d93367e812acae50a26a4ae96c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_217d5b464ee128c1d2c67dea2fa63fa8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d758b195b4feaba683c252d6ee6c4046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e980122b0937ebb79125f5638c94801 |
| publicationDate |
2016-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201631668-A |
| titleOfInvention |
Apparatus and method for producing an indium gallium arsenide active channel having an indium-rich surface |
| abstract |
A transistor device having an indium gallium arsenide active channel and its fabrication process can improve carrier mobility when fabricating a fin active channel, such as in a three gate or surround gate (GAA) device. In one embodiment, an indium gallium arsenide material can be deposited in a narrow trench to create a fin having an indium rich surface and a gallium rich central portion. The indium-rich surfaces will be in close proximity to the gate oxide layer of the transistor and will result in high electron mobility and improved switching speed relative to conventional homogeneous composition of indium gallium arsenide active channels. |
| priorityDate |
2014-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |