| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J9-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate |
2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1461cc3a6d15988119d4620e12f9ba7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4fe2ed0e1fac2c54870d97f18a272eef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_928c2d1235e67f0f388bd3b1c1f66a17 |
| publicationDate |
2016-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201630990-A |
| titleOfInvention |
Reactive UV heat treatment of low dielectric constant materials |
| abstract |
Various embodiments herein relate to methods and apparatus for preparing low-k dielectric materials on a semiconductor substrate. The dielectric material can include a pore former distributed throughout the structural matrix. A reactive ultraviolet heat treatment operation is performed to facilitate removal of the porogen from the dielectric material. The removal rate of the porogen is increased in a controlled manner by flowing a weak oxidant (e.g., carbon dioxide) into the reaction chamber during UV exposure. |
| priorityDate |
2014-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |