http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201630122-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8228 |
| filingDate | 2011-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac |
| publicationDate | 2016-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201630122-A |
| titleOfInvention | Semiconductor device and method of manufacturing same |
| abstract | One of the problems of the present invention is to provide a semiconductor device which realizes miniaturization, which includes a transistor in which an oxide semiconductor film is used for a channel formation region, in which variation in electrical characteristics caused by a short channel effect is suppressed. Further, one of the problems of the present invention is to provide a semiconductor device in which an on current is increased. A semiconductor device comprising: a pair of second oxide semiconductor regions having an amorphous region; and an oxide semiconductor film of a first oxide semiconductor region between a pair of second oxide semiconductor regions; a gate insulating film; A gate electrode provided on the first oxide semiconductor region via a gate insulating film, wherein one or more elements of a group 15 element such as nitrogen, phosphorus or arsenic are added to the second oxide semiconductor region. |
| priorityDate | 2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.