http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201627682-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e41651508566f0385833e1ba14a21ffd |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-4148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 2011-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a5dc4c25426f451618abbce8a4d73f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05ac5dae6a97990634541580427bc200 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_561dd047c8128d81478f7bce9f7bcc3e |
| publicationDate | 2016-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201627682-A |
| titleOfInvention | Apparatus and method for testing an ion sensing field effect transistor (ISFET) array |
| abstract | The present invention provides a test for a chemical sensing transistor device (such as an ion sensing field effect transistor device) that does not require exposure of the device to a liquid; in one embodiment, the present invention performs a first test to calculate The resistance of the transistor, according to the resistor, the invention then performs a second test to convert the transistor to be tested between a plurality of modes, and according to the corresponding measurement result, it is possible to utilize a small or even no need to add a circuit. A floating gate voltage can be calculated; in another embodiment, the source or drain parasitic capacitance can be used to bias the floating gate of the ion sensing field effect transistor device, and then a driving voltage and a bias voltage are input. Current to test the functionality of the transistor using this parasitic capacitance. |
| priorityDate | 2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.