http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201627544-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 |
| filingDate | 2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61a4421a05cbfcdc2237edd45f8a8e0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_685d8d09dd9fdf68f0fe6b4de39191b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b33d864fce62bb440a982649ba577229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c111740419d47c7bcfd717d4b8e5fd69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7f63a97344b5e8e272cd1a20ae11a8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35033448a14c4092423fc734deaf38b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3f2bf3d04938da92b228f528119d9ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94519bd05d589ab7650ba94fb4d1fb91 |
| publicationDate | 2016-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201627544-A |
| titleOfInvention | Free-standing gallium nitride substrate, light-emitting element, and manufacturing method thereof |
| abstract | The free-standing gallium nitride substrate provided by the present invention is formed of a plate composed of a plurality of gallium nitride-based single crystal particles having a single crystal structure in a substantially normal direction. The free-standing gallium nitride substrate can be manufactured according to the following method, the method comprising: preparing a step of aligning the polycrystalline sintered body; and, on the aligning polycrystalline sintered body, substantially conforming the complex crystal sintered body according to a crystal orientation a step of forming a seed crystal layer composed of gallium nitride in a manner of crystal orientation; forming a crystal layer having a thickness of 20 μm or more by crystal orientation in a manner of substantially crystallizing the orientation of the crystal layer of the seed crystal layer a step of forming a layer of a gallium-based crystal; and a step of removing the aligned polycrystalline sintered body to obtain a free-standing gallium nitride substrate. According to the present invention, it is possible to provide a free-standing gallium nitride substrate which is inexpensive and suitable for a large area, and can effectively use a gallium nitride single crystal substrate instead of a material. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116364819-A |
| priorityDate | 2013-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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