http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201627522-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dad362e41b94ffc328d120b0c0066a35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a607da87afe96d7d5e2b6f62f42a77fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32ea20e2cb4e9b5004dae6b3d9e0de15 |
| publicationDate | 2016-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201627522-A |
| titleOfInvention | Method for manufacturing integrated circuits |
| abstract | The present invention discloses a process for depositing aluminum oxynitride (AlON). The process includes subjecting the substrate as a subject to temporally and separately exposed to an aluminum precursor and a nitrogen precursor to form an aluminum-containing and nitrogen-containing compound on the substrate. The aluminum-containing and nitrogen-containing compounds are then exposed to an oxygen precursor to form AlON. Separate exposure to aluminum precursors and nitrogen precursors in time, as well as subsequent exposure to oxygen precursors, constitute an AlON deposition cycle. A plurality of AlON deposition cycles can be performed to deposit an AlON film having a desired thickness. The deposition can be performed in a batch processing chamber that can hold a batch of 25 or more than 25 substrates. The deposition can be performed without exposure to the plasma. |
| priorityDate | 2014-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.