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filingDate 2015-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_703b6ef8bc51965d79766592c6b09664
publicationDate 2016-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201626566-A
titleOfInvention Semiconductor device and method of manufacturing same
abstract The present invention improves the performance of a semiconductor device. The semiconductor device of the present invention includes an SOI substrate SB1 and a MISFET Q1 formed on the SOI substrate SB1. The SOI substrate SB1 has a substrate SS1, a ground plane region GP formed on the substrate SS1, a BOX layer 3 formed on the ground plane region GP, and an SOI layer 4 formed on the BOX layer 3. The base body SS1 is composed of tantalum, and the ground plane region GP includes a semiconductor region 1 composed of tantalum carbide.
priorityDate 2014-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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