| abstract |
A semiconductor device having a metal source and a drain region is illustrated. For example, a semiconductor device includes a gate electrode stack disposed over a semiconductor channel region of a substrate. The metal source and drain regions are disposed over the substrate on either side of the semiconductor channel region. Each metal source and drain region has a profile. The first out-of-semiconductor diffusion region is disposed in the substrate between the semiconductor channel region and the metal source region, and conforms to the contour of the metal source region. The second out-of-semiconductor diffusion region is disposed in the substrate between the semiconductor channel region and the metal drain region, and conforms to the contour of the metal drain region. |