| abstract |
A trench type power MOS field effect transistor and a manufacturing method thereof. The gate of the trench power MOS field-effect transistor comprises an upper doped region, an intermediate region and a lower doped region, wherein the intermediate region is an intrinsic region or a lightly doped region, and a PIN junction is formed in the gate Face, P+/N- or N+/P- junction. Thus, when the trench power MOS field-effect transistor operates, the junction capacitance formed by the PIN junction or the PN junction can be connected in series with the capacitance between the gate/drain and the gate/drain The equivalent capacitance between them is reduced. |