| abstract |
The present invention relates to a semiconductor device and a method of manufacturing a semiconductor device, comprising: a semiconductor substrate having a trench formed on a surface thereof; a trench electrode disposed in the trench; and covering the foregoing The surface of the trench electrode, the interlayer insulating film protruding from the surface of the semiconductor substrate, and the interlayer insulating film disposed on the surface of the semiconductor substrate are disposed at a position separated from the interlayer insulating film, and the semiconductor substrate is a Schottky-contacted Schottky electrode, and a buried electrode disposed in a recess between the interlayer insulating film and the Schottky electrode via a metal different from the Schottky electrode, and coated The interlayer insulating film, the buried electrode and the surface electrode of the Schottky electrode. |