| abstract |
The GaN-based half-bridge power conversion circuit employs control, support, and logic functions that are integrated monolithically on the same device as the power transistor. In some embodiments, a low side GaN device is in communication with a high side GaN device through one or more level shifting circuits. Both the high side device and the low side device can have one or more integrated control, support, and logic functions. Some devices use electrostatic discharge circuits and features formed in such GaN-based devices to improve the reliability and performance of such half-bridge power conversion circuits. |