abstract |
According to the present invention, it is possible to provide a cleaning method for removing photoresist and dry etching residue on a surface of a semiconductor element having a Low-k film and a material containing 10 atom% or more of germanium, which is characterized in that hydrogen peroxide is used. 0.002 to 50% by mass, 0.001 to 1% by mass of an alkaline earth metal compound, and a cleaning solution of alkali and water. |