http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201621479-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0149 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 |
| filingDate | 2015-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91b617b7330dc3697e12f299a37b1305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_521c38949a92d7457b11081da49cf1ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83a3fc917d48831be555dd4670e4e431 |
| publicationDate | 2016-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201621479-A |
| titleOfInvention | DC superposition curing for photoresist reflow temperature improvement |
| abstract | The techniques in this specification include methods for curing a material (e.g., photoresist) layer on a substrate to achieve relatively large resistance to thermal reflow. The increased reflow resistance allows for successful self-assembly of the block copolymer. The technique includes receiving a substrate having a patterned photoresist layer and placing the substrate in a processing chamber of a capacitively coupled plasma system. The patterned photoresist layer is processed by electron flux during the plasma processing by coupling the negative DC power to the top electrode of the plasma processing system. The electron flux is accelerated from the top electrode with sufficient energy to pass through the plasma and its sheath and strike the substrate, causing the patterned photoresist layer to change physical properties, which may include elevated glass transfer Glass-liquid transition temperature. |
| priorityDate | 2014-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.