| abstract |
A semiconductor device includes an active layer, a source, a drain, a gate, a first dielectric layer, a source lead, a first source through structure, a second dielectric layer, a source pad and a second source through structure. The source is placed on the active layer and extends in the first direction. The bungee is placed on the active layer and alternated with the source. The gate is placed between the source and the drain. The first dielectric layer covers the source, drain and gate. The source wire is placed on the first dielectric layer. The second dielectric layer covers the source wires. The source pad is disposed on the second dielectric layer and includes a first source stem, a first source branch, and a source sub-branch. The first source trunk extends in the first direction. The first source branch protrudes from the first source stem and is placed on the source lead. The source sub-branch protrudes from the first source branch and is placed on the source. |