| abstract |
The vertical gate full-surrounding device is formed by first forming a first doped region and a second doped region that are flush with each other. Forming a channel layer on the first doped region and the second doped region, and then forming a third doped region on the channel layer. Forming a fourth doped region flush with the third doped region, and patterning the first doped region, the second doped region, the third doped region, the fourth doped region, and the via layer to form the first The nanowire and the second nanowire, which then form a vertical gate full surround device. |