http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201619432-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 |
| filingDate | 2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c801c4bf49b643ad79c788ca0bdd5db6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7032ae51be89b34ded931945506c708a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c88433bc7ffcde6a03be06da8e8fabf9 |
| publicationDate | 2016-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201619432-A |
| titleOfInvention | Tungsten film forming method |
| abstract | An object of the present invention is to form a tungsten film at a satisfactory deposition rate when a tungsten film is used as a material gas and a tungsten film is supplied by a continuous gas.nThe solution of the present invention is a reducing gas comprising a reducing gas containing tungsten hexachloride gas and hydrogen as a tungsten raw material gas in a sealed chamber that houses the substrate to be processed and held in a reduced pressure atmosphere. The flushing gas is continuously supplied to form a tungsten film on the surface of the substrate to be processed. When the tungsten hexachloride gas is supplied, the chlorine gas is supplied simultaneously or the reducing gas is supplied at the same time. |
| priorityDate | 2014-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.