| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00595 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2015-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_521c38949a92d7457b11081da49cf1ce |
| publicationDate |
2016-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201618186-A |
| titleOfInvention |
Method for removing dry hard mask on microelectronic substrate |
| abstract |
The present disclosure relates to a method for removing a metal hard mask layer from a lower hard mask layer for a multi-step plasma process, which method can be used to implement a sub-lithography integration method. The lithography integration method can include repeatedly patterning a plurality of features into the metal hard mask layer that can be transferred to the hard mask layer. However, this repetitive process may leave a residue of the previous film on the metal hard mask, which may act as a micro-mask that may prevent the pattern from being transferred to the hard mask layer. The method of removing the micro-mask may be a two-step plasma process that removes the micro-mask using a ratio of a first gas mixture of a carbon-containing gas and a chlorine-containing gas. The remaining metal hard mask layer can be removed using the ratio of the carbon-containing gas and the second gas mixture of the chlorine-containing gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I658537-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163633-B2 |
| priorityDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |