| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2014-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f400059585fee2148fc83ed9978f8a46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0614c97cefb9e5affcd19fa64495890e |
| publicationDate |
2016-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201616655-A |
| titleOfInvention |
Semiconductor component and manufacturing method thereof |
| abstract |
A semiconductor component includes a substrate, a gate structure, and a gate spacer. The substrate has a semiconductor fin that protrudes from a surface of the substrate. The gate structure is on the semiconductor fin. The gate spacer is located on the sidewall of the gate structure. Wherein, the gate spacer comprises a first material layer and a second material layer which are stacked on each other and are in direct contact with the gate structure respectively. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108878529-A |
| priorityDate |
2014-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |