http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201616583-A

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filingDate 2014-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4f550c357a3894e38c28be113fe1696
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publicationDate 2016-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201616583-A
titleOfInvention Thin film transistor substrate manufacturing method
abstract A method for fabricating a thin film transistor substrate. The method includes: providing a substrate, and forming a gate on the substrate; forming a gate insulating layer covering the gate, a metal oxide layer and a first photoresist layer on the substrate; and patterning the first photoresist layer to Forming a first photoresist pattern; etching a metal oxide layer not covered by the first photoresist pattern to form a channel; removing portions on both sides of the first photoresist pattern to expose a portion of the via; forming a gate insulating layer a channel and a metal layer of the first photoresist pattern, and forming a second photoresist layer on the metal layer; patterning the second photoresist layer to form a second photoresist pattern; etching is not performed by the second photoresist pattern Covering the metal layer to form a source and a drain; and removing the first photoresist pattern and the second photoresist pattern.
priorityDate 2014-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 21.