http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201616570-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aaba167afb7060f9230270d8de6150b6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a025896aeb39ff1d7d2e5359a20ef5f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af8083c86ecbddfb38f5f38417f3328c |
| publicationDate | 2016-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201616570-A |
| titleOfInvention | Flash memory production method |
| abstract | The invention provides a method for fabricating a flash memory, in particular, the method of removing the dielectric layer by means of isotropic etching, the method comprising the steps of first providing a fin structure, the fin structure comprising a floating gate material layer, and oxidizing a layer and a semiconductor layer, an insulating layer is disposed on both sides of the fin structure, and then a dielectric layer is formed to conformably cover the floating gate material layer and the insulating layer, and then a patterned first mask layer and a pattern are formed Forming a second mask layer, a control gate sequentially stacked on the dielectric layer from top to bottom, and controlling the gate across at least one fin structure, followed by at least one first isotropic etching step, With the floating gate material layer and the insulating layer as the etch stop layer, the exposed dielectric layer is removed isotropically until the dielectric layer is completely removed. |
| priorityDate | 2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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