| abstract |
The invention discloses a resistive memory for solving the problem of the sneak current of a conventional resistive memory on an integrated circuit, the resistive memory comprising: a two-electrode layer; and a resistive layer disposed on the two-electrode layer The resistance layer is mainly composed of an oxygen-containing insulating material, a metal material, and a movable ion, and the polarity of the movable ion is opposite to the polarity of the oxygen ion. In addition, the present invention also discloses a method of manufacturing the resistive memory. Thereby, the above problem can be surely solved. |