| abstract |
A semiconductor device structure and a method of forming the same are provided. The above method of forming a semiconductor structure includes forming a source/drain structure on a substrate and forming a metal layer on the source/drain structure. The method of forming the semiconductor structure further includes performing a tempering process to react a portion of the metal layer with the source/drain structure to form a metallization layer on the source/drain structure. Further comprising performing an etching process to remove unreacted portions of the metal layer on the metallization layer and forming contact plugs on the metallization layer. In addition, the etching process includes using an etching solvent, and the etching solvent includes (a) a first component, H 2 SO 4 , HCl, HF, H 3 PO 4 or ammonia NH 4 OH; and (b) a second component including propylene carbonate, ethylene carbonate, carbonic acid Diethyl ester, acetonitrile or a combination of the foregoing. |