| abstract |
An inverted top emitting device and a preparation method thereof, comprising an ITO/Ag/ITO substrate, a cathode, an electron injecting layer, an electron transporting layer, a light emitting layer, a hole transporting layer and an anode which are sequentially stacked, wherein the material of the cathode is barium carbonate . The inverted top emitting device and the preparation method thereof provided by the invention are based on the existing ITO/Ag/ITO/HTL/EML/ETL/Mg:Ag structure, and the device structure is changed to: ITO/Ag/ITO/Cs2CO3 /ETL/EML/HTL/MoO3/Ag, this avoids the use of low work function metal Mg. In this case, even if the package is not ideal, it can ensure that the device is not easily oxidized by water and oxygen, thus ensuring better Ideal device life. |